UniDron EFEM-Semi
Circular depth multi-layer stress Wafer doping concentration
Thin film deposition process, (positive compressive stress), Double layer aluminum ion implantation process (aluminum doping value)
(negative tensile stress), (spectral peak displacement distribution) (negative tensile stress), (spectral peak displacement distribution)
crystalline imperfection Qualitative analysis of material composition
Substrate stacking faults (FWHM distribution of spectral peaks) Etching process foreign matter
(Residual SiO2 on chip) (Distribution of spectral peak positions)
