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| Publisher:Shanghai Jinghong Kepu Optoelectronics Technology Co., Ltd. Release time:2025-06-24 10:36:11 Click count:40 Close |
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Changes in material structure Specific layer concentration of wafer Wafer cutting process (peak position distribution) Transistor structure process, (chemical bond breaking and decomposition into Si and C) multi-layer silicon germanium alloy concentration, (excessive precipitation of Si and C at high temperature) (peak intensity distribution) (peak shift distribution) |
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