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    UniDron EFEM-Semi
    Publisher：Shanghai Jinghong Kepu Optoelectronics Technology Co., Ltd. Release time：2025-06-24 13:26:12 Click count：31 Close


                   

     Circular depth multi-layer stress                                                                                Wafer doping concentration
    Thin film deposition process, (positive compressive stress),                             Double layer aluminum ion implantation process (aluminum doping value)
           (negative tensile stress), (spectral peak displacement distribution)                                 (negative tensile stress), (spectral peak displacement distribution)


        
              

                   crystalline imperfection                                                                                              Qualitative analysis of material composition
    Substrate stacking faults (FWHM distribution of spectral peaks)                                                         Etching process foreign matter
                                                                                                                                     (Residual SiO2 on chip) (Distribution of spectral peak positions)






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